“With our 4th generation V-NAND technology, we can provide leading-edge differentiated values in high-capacity, high-performance and compact product dimensions, which together will contribute to our customers achieving better TCO results,” said Young-Hyun Jun, President of the Memory Business at Samsung Electronics.

“We will continue to introduce more advanced V-NAND solutions and expand our flash business initiatives in maximizing an unbeatable combination of performance and value.”

Samsung’s 4th Generation V-NAND stacks 30 percent more layers of cell-arrays than its predecessor

Samsung introduced its 4th generation, 64-layer triple-level-cell V-NAND flash memory that pushes the envelope of NAND scaling, performance and storage capacity. Stacking 64 layers of cell-arrays, the new V-NAND can increase its single-die density to an industry-leading 512Gb and its IO speed to 800Mbps, which further distinguishes Samsung’s technology leadership in three-dimensional NAND cell structure design and production.

Samsung plans to provide the world’s first 4th generation V-NAND flash memory products in the fourth quarter of this year, which will help manufacturers to produce faster, more stylish and portable computing devices, while offering consumers a more responsive computing environment.