News
Toshiba Starts Construction of Fab 6 and Memory R&D Center at Yokkaichi, Japan
Published: Feb 09,2017Toshiba Corporation today announced that it has started construction of a new state-of-the-art semiconductor fabrication facility, Fab 6, and a new R&D center, the Memory R&D Center, at Yokkaichi Operations in Mie prefecture, Japan, the company’s main memory production base.
Toshiba Releases 650V Super Junction Power MOSFETs in TOLL Package
Toshiba has launched 650V super junction power MOSFETs, TK065U65Z, TK090U65Z, TK110U65Z, TK155U65Z and TK190U65Z, in its...
Toshiba Launches 100V High-Current Photorelay for Industrial Equipment
Toshiba has launched "TLP241B," a high-current photorelay in a DIP4 package for industrial equipment such as programmable logic controllers and I/O interfaces...
Fab 6 will be dedicated to production of BiCS FLASH, Toshiba’s innovative 3D Flash memory. Like Fab 5, construction will take place in two phases, allowing the pace of investment to be optimized against market trends, with completion of Phase 1 scheduled for summer 2018. Toshiba will determine installed capacity and output targets and schedules by closely monitoring the market.
Toshiba will also construct a Memory R&D Center adjacent to the new fab, with completion targeting December 2017. The facility will advance development of BiCS FLASH and new memories.
Toshiba is determined to enhance its competitiveness in the memory business by timely expansion of BiCS FLASH production in line with market trends, and to retain leadership in innovation in the memory business.
CTIMES loves to interact with the global technology related companies and individuals, you can deliver your products information or share industrial intelligence. Please email us to en@ctimes.com.tw
965 viewed