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eMemory’s NeoFuse Implemented in HV Process for OLED Application

Published: Mar 08,2017

HSINCHU, Taiwan – NVM IP provider eMemory announces today its NeoFuse IP has been extensively implemented in High Voltage(HV) platforms across all process nodes from 0.11um to 40nm in six leading foundries responding to the rising demand for Organic Light Emitting Diode (OLED) display applications.

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eMemory’s NeoFuse has proven its superiority with wide range operation, good reliability, flexible usage, and high security across process platforms. The specification advantages that NeoFuse IP successfully demonstrated in 40nm HV process platform have been carried over to the derivative HV process platform with 8V Medium Voltage (MV) device for OLED applications. eMemory’s NeoFuse IP has a wide operating voltage of 2.3V to 4.5V in order to facilitate early readiness for data setting and trimming and so save power and make product design more flexible.

eMemory’s NVM IP solutions for Display Driver IC(DDI) and Touch with Display Driver IC(TDDI) have been well adopted by foundries all over the world. The total number of new tape outs by the end of 2016 was over 460, and wafer shipments exceeded 7M pcs (8’’ equivalent).

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