TAIPEI, Taiwan - Recognizing the importance of obsolescence mitigation in embedded and industrial systems, two of the biggest names in advanced storage...
As the DRAM market migrates to DDR4 memory, several key manufacturers have already announced end-of-life (EOL) production of DDR3 modules based on high-density DDR3 8 Gbit components, including EOL notice of the components. “ATP is committed to preventing a supply shortage of DDR3 memory that could adversely affect the business operations of our valued customers,” said Marco Mezger, ATP Vice President of Global Marketing. “To continue supporting their requirements for specific DDR3 memory such as VLP RDIMMs or high-density SO-DIMMs now and in the foreseeable future, ATP has decided to provide its own DDR3 8 Gbit components for these modules.”
ATP’s own-built DDR3 modules consist of meticulously characterized and tested high-quality integrated circuits (ICs). The components are manufactured according to ATP’s exacting standards using 2x nm manufacturing process technology and are tested via an extensive component test program to improve the overall memory module performance.
ATP DDR3 8 Gbit components are free from row hammer effects, thus preventing any disastrous random bit flips caused by the electrical charge of cells leaking to adjacent cells and successively writing data to them. At module level, ATP implements 100% test during burn-in (TDBI) into the production flow to guarantee the high-quality module.
ATP DDR3 components are available in monolithic 8 Gb one-chip select (1CS) or as DDP two-chip select (2CS) for a variety of memory modules based on this technology. DIMMs, SO-DIMMs and Mini-DIMMs in 1CS package are available in 16 GB capacity and 1600 MT/s transfer speed. ATP offers 2CS DIMMs in 16 to 32 GB capacity and 1333 or 1600 MT/s, while 2CS Mini-DIMMs are at 8 GB capacity and 1600 MT/s. ECC and non-ECC options are available on various form factors.
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