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STM to Supply Advanced SiC Power Electronics to Renault-Nissan-Mitsubishi for Next-Gen EVs

Published: Sep 16,2019

STMicroelectronics has been chosen to supply high-efficiency silicon-carbide (SiC) power electronics by Renault-Nissan-Mitsubishi (Alliance) for advanced on-board chargers (OBCs) in its upcoming electric vehicles.

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Renault-Nissan-Mitsubishi plans to use the new SiC power technology to build more efficient and compact high-power OBCs that will further increase attractiveness of electric vehicles for the users by cutting battery-charging time and enhancing driving range. As Renault-Nissan-Mitsubishi’s chosen partner for advanced SiC technology, ST will provide design-in support to help maximize OBC performance and reliability.

ST is also to supply Renault-Nissan-Mitsubishi with associated components, including standard silicon devices. The OBCs with ST’s SiC are scheduled to enter volume production in 2021.

“As the pioneer and global leader in zero-emission electric vehicles, our objective remains to be the number one provider of mainstream mass-market and affordable EVs around the world,” said Philippe Schulz, Alliance VP Design Electric & Hybrid Powertrain. “The small size, light weight, and high energy efficiency we can achieve using ST’s SiC technology in our OBC, combined with the increased battery efficiency, will enable us to accelerate the adoption of electric vehicles by reducing charging times and extend the range of our EVs.”

Marco Cassis, President, Sales, Marketing, Communications and Strategy Development, STMicroelectronics, said, “SiC technology can help the world by reducing dependence on fossil fuels and increasing energy efficiency. ST has successfully developed manufacturing processes and established a portfolio of qualified, commercialized SiC products also in automotive-grade version. Building on our long cooperation, we are now working with Renault-Nissan-Mitsubishi to realize the many advantages SiC can bring to EVs. Moreover, this commitment helps ensure success by increasing the economies of scale to deliver superior-performing SiC-based circuits and systems that are also cost-effective and affordable.”

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