Responding to the imbalance of manpower supply-demand in Taiwan’s semiconductor industry, the United Microelectronics ...
HSINCHU, Taiwan – eMemory today announced a partnership agreement with the U.S. Defense Advanced Research Projects Age...
eMemory’s 8Mb RRAM IP, which features an additional 16Kb information block and critical functions such as in-chip repair and error detection/correction, is designed for code storage in microcontrollers and smart power management ICs used in IoT devices. It can also enable in-memory computing for artificial intelligence. UMC offers a 22nm 0.8V/2.5V RRAM platform, which has the advantages of fewer mask layers, shorter cycle time, and easier integration with its specialty process technologies such as Bipolar-CMOS-DMOS (BCD) and high voltage.
"RRAM is an imperative multi-time programmable embedded memory option now available for 22nm and 40nm processes. Our next RRAM specification on UMC’s 22nm platform is targeting bigger density (16Mb), higher speed, higher write temperature and higher storage lifetime for automotive applications," said C.Y. Lin, CTO and GM of MTP Business Group at eMemory. "Furthermore, eMemory and UMC continue to develop RRAM solutions for 0.8V/1.8V ULP. With low operational voltage for READ and WRITE modes, our RRAM will be the most cost-effective eFlash solution for mainstream processes with scalability for more advanced process nodes."
“Demand for non-volatile memory with low-power consumption is increasing as AIoT continues to proliferate. Successful verification of eMemory’s IP marks the launch of our 22nm RRAM platform, which provides customers with an enhanced memory solution to develop their next-generation products,” said Steven Hsu, Vice President of the Technology Development Division at UMC. “UMC is committed to providing a comprehensive and differentiated portfolio of specialty foundry technologies, and we are excited to work with eMemory to continue enhancing our embedded memory options for AIoT and automotive markets.”
eMemory’s RRAM IP comes with an endurance of 10k cycle times and 10-year data retention up to 105 degrees Celsius. For the user's convenience, this RRAM IP is built with friendly interfaces, comprehensive user and test modes, and programmability at 0.8V/2.5V nominal dual voltage.
RRAM is well-known for having no changes on the front-end process and nearly no extra thermal budget owing to its low-temp backend flow. Compared with the split-gate Flash, RRAM has a simpler structure, fewer masks, easier fabrication, and higher CMOS-process compatibility. Compared to MRAM, RRAM also maintains a better magnetic-resistant capability in a strict automotive application.
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