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Smallest 60V Power MOSFET Boosts Power Density

Published: Mar 20,2014

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Diodes Incorporated introduced the world’s smallest 60V N-channel power MOSFET with a sub-100mΩ on-resistance. With a footprint measuring 1.6mm x 1.6mm and a typical height of 0.5mm, the DFN1616-packaged DMN6070SFCL helps achieve higher power densities in space-critical products, including cellphones, ultra-thin LCD TVs and hand-held gaming controls.

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With its very low on-resistance of only 74mΩ (typ) at a VGS of 4V, the MOSFET also helps to minimize conduction losses and raise overall power efficiency. The DMN6070SFCL handles a continuous current of 2A and supports a pulsed current of 10A, enabling it to cope well with DC-DC conversion spikes.

The miniature MOSFET is just one of a series of 60V N- and P-channel devices produced by Diodes Incorporated to meet the needs of load switch, DC-DC conversion and signal switching duties. Four larger package options are also offered: SO8, SOT23, SOT223 and TO252, suiting a wide range of applications including consumer electronics, industrial controls and HVAC equipment.

Features:

- Typical off board profile of 0.5mm - ideally suited for thin applications

- Low RDS(ON) – minimizes conduction losses

- PCB footprint of 2.56mm2

- Totally Lead-Free & Fully RoHS Compliant

- Halogen and Antimony Free. “Green” Device

- Qualified to AEC-Q101 standards for High Reliability

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