Winbond developed the new W25N Serial Flash series based on the well-established SpiFlash interface protocol and low-pin-count packages, to provide a seamless transition and higher-density coverage for Serial NOR Flash memory customers and leverage their existing SPI controller designs. Enabling customers to upgrade their software smoothly, Winbond is applying to these devices Continuous Read Operation with 52MB/s data transfer rate. Their features and performance are compatible with Serial NOR flash memory and ideal for code-shadowing applications.

To manage larger data more efficiently, the W25N Series features a page programming time of 250us and block-erase time of 2ms, which are 10 and 100 times faster, respectively, than those of conventional NOR Flash memories. As a result of faster program-and-erase operation, total power consumption for its completion is also reduced 10 and 100 times.

Other features, such as embedded error-correction code and an on-chip bad-block management utility, improve the data integrity of the Flash memory and meet code-storage requirements. The W25N Serial flash series is available in densities starting at 1G-bit, with 8-pad WSON and 24-ball TFBGA packages.

“We are extremely pleased with the interest that several major designers and manufacturers have shown in our new Serial Flash products, as well as with the initial success we’ve had ramping up this high density product family,” said John Park, president of Winbond Electronics Corporation America. “We are committed to providing long-term support to our customers with the Serial Flash families.”

The 1Gb Serial Flash memory is sampling now and will be available in production starting later this quarter. The 2Gb density Serial Flash device will be available starting 2Q’2015.

To assure satisfying growing global demand, all the new Winbond 46nm Serial Flash products are manufactured in Winbond’s 12-inch wafer fabrication facility in Taichung, Taiwan.