Along with the spread and evolution of quick chargers, higher performance is demanded for power MOSFETs used in secondary-side rectifiers. The new MOSFETs utilize Toshiba’s low-voltage trench structure process to achieve the industry’s leading-class low on-resistance and high-speed performance.

The structure lowers the performance index for “RDS(ON) * Qsw” , improving switching applications. Output loss is improved by the reduction of output charge, which can contribute to higher set efficiency. Also, support for 4.5 V logic level drives makes buffer-less drive from the controller IC possible, contributing to reducing power consumption of the system.

Furthermore, the new products can respond to the high output and voltage power supplies required in USB 3.0 related applications. The new MOSFETs are suited for applications including quick chargers, switched-mode power supplies and DC-DC converters for servers and communication equipment.