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Toshiba Announces Next-Generation Superjunction Power MOSFETs

Published: Aug 20,2018

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Toshiba has launched a new series of next-generation 650V power MOSFETs that are intended for use in server power supplies in data centers, solar (PV) power conditioners, uninterruptible power systems (UPS) and other industrial applications.

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The first device in the DTMOS VI series is the TK040N65Z, a 650V device that supports continuous drain currents (ID) up to 57A and 228A when pulsed (IDP). The new device offers an ultra-low drain-source on-resistance RDS(ON) of 0.04Ω (0.033Ω typ.) which reduces losses in power applications. The enhancement mode device is ideal for use in modern high-speed power supplies, due to the reduced capacitance in the design.

Power supply efficiency is improved as a result of reductions in the key performance index / figure-of-merit (FoM) – RDS(ON) x Qgd. The TK040N65Z shows a 40% improvement in this important metric over the previous DTMOS IV-H device, which represents a significant gain in power supply efficiency in the region of 0.36% - as measured in a 2.5kW PFC circuit.

The new device is housed in an industry-standard TO-247 package, ensuring compatibility with legacy designs as well as suitability for new projects.

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