? New TI Portfolio of Ready-to-use, 600-V GaN FET Power Stages Supports Applications up to 10 kW
 
Taipei, Sunday, Jul 21, 2019, 06:19

Technology Front

New TI Portfolio of Ready-to-use, 600-V GaN FET Power Stages Supports Applications up to 10 kW

Published: Oct 31,2018

260 Read

Texas Instruments (TI) announced a new portfolio of ready-to-use, 600-V gallium nitride (GaN), 50-mΩ and 70-mΩ power stages to support applications up to 10 kW. The LMG341x family enables designers to create smaller, more efficient and higher-performing designs compared to silicon field-effect transistors (FETs) in AC/DC power supplies, robotics, renewable energy, grid infrastructure, telecom and personal electronics applications.

More on This

Smallest Data Converters Deliver High Integration and Performance

Texas Instruments (TI) introduced four tiny precision data converters, each the industry’s smallest in its class. The ...

TI Introduces a New Family of LED Drivers with 12-bit PWM, 29-kHz Dimming Frequency

First 12-bit, 29-kHz RGB LED Driver Family Enables Vivid Color and Seamless Animation with Zero Audible Noise Texas I...

TI's family of GaN FET devices provides a smart alternative to traditional cascade and stand-alone GaN FETs by integrating unique functional and protection features to simplify design, enable greater system reliability and optimize the performance of high-voltage power supplies.

With integrated <100-ns current limiting and overtemperature detection, the devices protect against unintended shoot-through events and prevent thermal runaway, while system interface signals enable a self-monitoring capability.

TI's integrated GaN power stage doubles power density and reduces losses by 80 percent compared to silicon metal-oxide semiconductor field-effect transistors (MOSFETs). Each device is capable of fast, 1-MHz switching frequencies and slew rates of up to 100 V/ns.

The portfolio is backed by 20 million hours of device reliability testing, including accelerated and in-application hard switch testing. Additionally, each device provides integrated thermal and high-speed, 100-ns overcurrent protection against shoot-through and short-circuit conditions.

Each device in the portfolio offers a GaN FET, driver and protection features at 50 mΩ or 70 mΩ to provide a single-chip solution for applications ranging from sub-100 W to 10 kW.

comments powered by Disqus