UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, has opened an office in Shenzhen, China, and ap...
The new products offer RDS(on) values of 30mohms (UF3C065030T3S) and 80mohms (UF3C065080T3S). The three-leaded, industry-standard TO220-3L package features enhanced thermal characteristics made possible by a sintered-silver packaging technology developed by UnitedSiC.
The new devices will appeal to designers who are seeking a more powerful performance in a 3-lead TO220 package option for applications such as EV charging, PV inverters, switch mode power supplies, power factor correction modules, motor drives and induction heating.
Both new SiC FET products are based on a unique UnitedSiC ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices on existing designs in which designers can expect a performance increase with lower conduction and switching losses, enhanced thermal properties and integrated gate ESD protection.
In the case of new designs, the UnitedSiC FETs deliver increased switching frequencies to gain substantial system benefits in both efficiency and reduction in size, and cost of passive components, such as magnetics and capacitors. The FAST Series devices offer not only ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads when used with recommended RC-snubbers, and any application requiring standard gate drive.
The UnitedSiC UF3C FAST SiC series, which now totals 14 devices, is available in a range of TO247-3L, TO247-4L, TO220-3L and D2PAK7-3L packages, with four 1200V and ten 650V options.
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