Toshiba Corporation’s Storage & Electronic Devices Solutions Company announced the launch of JEDEC e∙MMC Version 5.1 compliant embedded NAND flash memory products supporting AEC-Q100 Grade2 requirements. The line-up offers densities of 8GB, 16GB, 32GB and 64GB...

China’s National Integrated Circuitry Investment Fund (here referred to as “National IC Fund”) has committed to invest nearly RMB 70 billion into the domestic semiconductor sector since its creation in 2015. Approximately 60% of the committed investment amount has been allocated to building semiconductor wafer fabs, according to TrendForce’s analysis...

According to IC Insights’ latest report, number of IC manufacturers using 300mm wafers less than half using 200mm wafers, and is becoming top-heavy. IC Insights said, prior to 2008, the 200mm wafer was used in more cases for manufacturing ICs than any other wafer size...

Lattice Semiconductor Corporation announced its new iCE40 UltraPlus FPGA devices, one of the industry’s most energy-efficient & programmable mobile heterogeneous computing (MHC) solutions. This latest addition to the iCE40 Ultra family delivers eight times more memory (1...

DRAMeXchange, a division of TrendForce, reports that the global shortage of NAND Flash has reached its most severe phase for 2016 in this fourth quarter. Factors that aggravate the shortage include strong smartphone shipments, growing SSD demand and the increase in the average memory density of eMMCs and eMCPs...

Renesas Electronics Corporation today announced its successful development of the world’s first split-gate metal-oxide nitride oxide silicon (SG-MONOS) flash memory cells employing transistors with fin-shape for use in microcontrollers (MCUs) with on-chip flash memory having a circuit linewidth of 16 to 14 nanometer (nm) or finer...

At IEEE IEDM conference, imec reported for the first time the CMOS integration of vertically stacked gate-all-around (GAA) silicon nanowire MOSFETs. Key in the integration scheme is a dual-work-function metal gate enabling matched threshold voltages for the n- and p-type devices...