Taipei, Monday, May 01, 2017, 08:22

News

TSMC to Publish 7nm FinFET Technology at ISSCC 2017

By Korbin Lan
Published: Nov 15,2016

TSMC wafer

TAIPEI, Taiwan – The International Solid-State Circuits Conference (ISSCC) 2017 is going to be held on February 5, 2017 to February 9 in San Francisco, United States. And there will be 15 papers to be published from Taiwan, including TSMC’s 7-nanometer Fin Field-Effect Transistor (FinFET) technology which will be the industry’s first to announce at ISSCC 2017.

More on This

TSMC Will Not Join Toshiba Chip Bidding

TAIPEI, Taiwan - TSMC said in its Q1 investor conference last week that it will not join the bidding For Toshiba chip unit and TSMC will never enter the standard DRAM market...

TSMC Forecasts a Gloomy Second Quarter But a Hot Third Quarter

TAIPEI, Taiwan - TSMC today announced its first quarter consolidated revenue of NT$233.91 billion, net income of NT$87.63 billion, and diluted earnings per share of NT$3...

At ISSCC 2017, a total of 208 papers were selected, and 15 papers of which came from Taiwan including nine papers from the industry and six papers form academia.

Five papers of TSMC was selected (including one from the TSMC USA), three of which are from memory circuit design department of TSMC, and the other two are analogical circuit papers.

In addition, TSMC will be the first to publish 7nm FinFET technology, and has verified it on the 256M bits high-density static random access memory test chip. It will greatly enhance the computing performance of processor of mobile phone, tablet and PC.

CTIMES loves to interact with the global technology related companies and individuals, you can deliver your products information or share industrial intelligence. Please email us to en@ctimes.com.tw

1208 viewed

comments powered by Disqus