Available in through-hole and surface mount packages, the expanded 60V StrongIRFET family includes the IRF7580M. Housed in a low profile, ultra-compact Medium Can (ME) DirectFET package that delivers high current density while reducing overall system size and cost, the IRF7580M is well suited for space constrained high power industrial designs.

The family of 19 60V StrongIRFET power MOSFETs offers ultra-low on-state resistance (Rds(on)) for improved performance in low frequency applications, very high-current carrying capability, soft body diode, and 3V typical threshold voltage to improve noise immunity. Each device in the family is 100% avalanche tested at industry highest avalanche current levels to ensure the most robust solution for demanding industrial applications.

“Featuring low Rds(on) and high current capability for the industrial market, IR’s expansive 60V StrongIRFET MOSFET portfolio with its diverse package offering provides designers flexibility in selecting the optimal device for their application based on their price/performance criteria,” said David Schroeder, Executive Director of Marketing, IR’s Power Management Devices Business Unit.

As with the entire DirectFET family, the new IRF7580M Medium Can device has wire bond free construction for improving reliability performance. Moreover, the DirectFET package meets all RoHS requirements such as a completely lead-free bill of materials, and is, therefore, ideally suited for long lifecycle designs. Alternative high performance packages feature lead die attach under RoHS exemption 7(a) which is due to expire in 2016.