The new 8GB LPDDR4 operates at up to 4,266 megabits per second (Mbps), which is twice as fast as DDR4 DRAM for PCs working typically at 2,133 Mbps per pin. Assuming a 64 bit (x64) wide memory bus, this can be viewed as transmitting over 34GBs of data per second.

The Samsung 8GB LPDDR4 DRAM provides much more efficient power consumption thanks to its use of the latest 10nm-class process technology and Samsung’s proprietary low-power circuit design. This circuit design enables the memory chip to double the capacity of the company’s 20nm-class 4GB DRAM package, while consuming approximately the same amount of power.

The 8GB LPDDR4 package has XYZ dimensions of under 15mm by 15mm by 1.0mm, which satisfies space requirements of most new, ultra slim mobile devices. Using a DRAM package thinner than 1.0mm enables stacking the package together with UFS memory or a mobile application processor, depending on device manufacturers’ preferences, which will allow further space savings on the printed circuit board.