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Toshiba’s 80V N-channel Power MOSFETs Fabricated with Latest Generation Process

Published: Mar 30,2020

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Toshiba has added 80V N-channel power MOSFETs to its “U-MOS X-H series” fabricated with the latest generation process. The new MOSFETs are suitable for switching power supplies in industrial equipment used in data centers and communication base stations.

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Drain-source On-resistance in the new 80V U-MOS X-H products, manufactured with the latest generation process, is approximately 40% lower than that of 80V products in the current generation process U-MOS VIII-H series products. The trade-off between the drain-source On-resistance and the gate charge characteristics has also been improved by optimizing device structure. As a result, the new products feature industry’s lowest power dissipation.

Toshiba is expanding its lineup of products that reduce power dissipation to help cut equipment power consumption.

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