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Annual Sales Revenue from Fabless IC Design to Drop 3.2% in 2016, TrendForce Reports (2016.11.29)

The latest estimate from market research firm TrendForce puts sales revenue worldwide from fabless IC design for 2016 at US$77.49 billion, a decline of 3.2% from 2015. However, TrendForce expects strong growth in several application markets in 2017, such as automotive electronics...

TSMC to Start Its 5nm Process Production in Tainan, Taiwan Next Year (2016.11.25)

TAIPEI, Taiwan - The environmental assessment of the TSMC's 5-nanometer process production in Tainan, Taiwan, yesterday had been approved by the Taiwan Environmental Protection Administration. TSMC said its 5-nanometer process will start next year, to enter mass production in 2020...

Q3 2016 Taiwan IC Revenue Totaled NT$659.6 Billion (2016.11.17)

TAIPEI, Taiwan - According to The Taiwan Semiconductor Industry Association (TSIA) that Q3 2016 Taiwan IC revenue as a whole (including design, manufacturing, packaging and testing) totaled NT$659.6 billion(US$20.7B), 9.7% growth on-quarter and up 14...

UMC Holds Grand Opening Ceremony for New 12-Inch Wafer Fab in China (2016.11.16)

United Microelectronics Corporation (UMC) today celebrated the grand opening of United Semi, UMC’s 12-inch joint venture wafer fab in Xiamen China. The fab was completed in record time, realized volume production for customer products merely 20 months after groundbreaking in March of 2015...

eMemory’s NeoFuse IP Verified in TSMC 10nm FinFET Process (2016.11.16)

HSINCHU, Taiwan – eMemory today announced the successful demonstration of its security-enhanced NeoFuse IP in TSMC’s 10nm FinFET process, along with IP design kits available to customers for product design-in. Security concerns associated with high-level chips heighten the need for security functions in logic NVM IP with leading-edge process nodes...

TSMC to Publish 7nm FinFET Technology at ISSCC 2017 (2016.11.15)

TAIPEI, Taiwan – The International Solid-State Circuits Conference (ISSCC) 2017 is going to be held on February 5, 2017 to February 9 in San Francisco, United States. And there will be 15 papers to be published from Taiwan, including TSMC’s 7-nanometer Fin Field-Effect Transistor (FinFET) technology which will be the industry’s first to announce at ISSCC 2017...

Modulated Doping Improves GaN-based Vertical-cavity Surface-emitting Lasers (2016.11.14)

Researchers at Meijo University and Nagoya University in Japan demonstrate a design of GaN-based vertical-cavity surface-emitting lasers (VCSELs) that provides good electrical conductivity and is readily grown. The findings are reported in Applied Physics Express...

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