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20V, 500mA LDO with Ultralow (0.8μVRMS) Noise & 76dB PSRR (2016.10.12)

Linear Technology Corporation announces the LT3045, an ultralow noise, ultrahigh power supply ripple rejection (PSRR) low dropout voltage linear regulator, a higher output current version of the widely accepted 200mA LT3042 ultralow noise LDO...

NAND Flash Prices on Upswing in Q4,TrendForce Says (2016.10.11)

The supply shortage that persisted in the NAND Flash market during the third quarter will become more acute in the fourth quarter due to surging demand from clients in the smartphone and SSD industries, says DRAMeXchange, a division of TrendForce...

Samsung Mass Produces 14nm FinFET Application Processor for Wearable Devices (2016.10.11)

Samsung Electronics today announced that it has begun mass production of the Exynos 7 Dual 7270. It is the first mobile application processor (AP) in the industry designed specifically for wearable devices with 14-nanometer (nm) FinFET process technology...

Samsung 960 PRO and 960 EVO, the V-NAND Based SSDs (2016.10.10)

Samsung Electronics unveiled the Samsung 960 PRO and 960 EVO, its newest solid state drives (SSDs). The V-NAND based, M.2 form factor SSDs were built on the company’s category-defining Non-Volatile Memory Express (NVMe) SSD leadership...

World's First Transceiver Chip with FCC's New V-band Frequencies (2016.10.07)

Sivers IMA launches a fully integrated V-band transceiver RFIC. The difference between this transceiver and previous generations from Sivers IMA is that all parts are made of Silicon-Germanium. The circuit includes a complete millimeter wave transceiver (transmitter and receiver), digital control, signal source and a complete analog baseband...

Wafer Size to Dominated by 300mm and to Continue Increasing Through 2020 (2016.10.07)

According to IC Insights’ Global Wafer Capacity 2016-2020 report that worldwide capacity by wafer size was dominated by 300mm wafers in 2015 and is forecast to continue increasing through 2020, the ambitious goals to put 450mm wafers to use have been scaled back due to enormous financial and technology hurdles...

Alliance Memory's New 512-Mb High-Speed Mobile SDR SDRAM (2016.10.06)

Alliance Memory introduced two new high-speed CMOS mobile synchronous DRAMs (MSDR) designed to extend battery life in mobile devices. Featuring low power consumption of 1.8 V and a number of power-saving features, the 512-Mb AS4C32M16MS and AS4C16M32MS are offered in 8-mm by 9-mm 54-ball and 8-mm by 13-mm 90-ball FPBGA packages...

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