Vishay Intertechnology introduced a new dual n-channel TrenchFET power MOSFET in the ultra-compact, thermally enhanced PowerPAK SC-70 package. Designed to save space and increase power efficiency in portable electronics, the Vishay Siliconix SiA936EDJ features the industry's lowest on-resistance for 20 V (12 V VGS and 8 V VGS) devices at 4.5 V and 2.5 V gate drives in the 2 mm by 2 mm footprint area.
The device released today is optimized for load and charger switches, DC/DC converters, and H-bridges and battery protection for power management in smartphones, tablet PCs, mobile computing devices, non-implantable portable healthcare products, and handheld consumer electronics with small brushless DC motors.
For these applications the SiA936EDJ offers extremely low on-resistance of 34 mΩ (4.5 V), 37 mΩ (3.7 V), and 45 mΩ (2.5 V) and built-in ESD protection of 2000 V. Its on-resistance at 2.5 V is 11.7 % lower than the closest competing 8 V VGS device — while providing higher (G-S) guard band — and 15.1 % lower than the closest competing device with a 12 V VGS.
The device's industry-low on-resistance allows designers to achieve lower voltage drops in their circuits and promote more efficient use of power and longer battery run times. By integrating two MOSFETs into one compact package, the dual SiA936EDJ simplifies designs, lowers the overall component count, and saves critical PCB space. The MOSFET is 100 % Rg-tested, halogen-free according to the JEDEC JS709A definition, and compliant to RoHS Directive 2011/65/EU.
Features:
‧ TrenchFET Power MOSFET
‧ Thermally enhanced PowerPAK SC-70 package
‧ Typical ESD protection: 2000 V (HBM)
‧ 100 % Rg tested
