東芝推出搭載高效率、靜電放電保護、小型封裝MOSFET IC (2018.04.03)
東芝電子元件及儲存裝置株式會社宣布推出搭載高效率靜電放電保護的雙MOSFET IC – SSM6N813R，此新產品適用於需耐高壓及小尺寸的車用產品或裝置，包括LED頭燈驅動IC，並於4月開始量產出貨。 新IC – SSM6N13R擁有10…
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Toshiba Electronic Devices & Storage Corporation has released a dual MOSFET “SSM6N813R” with high ESD protection positio…
東芝針對繼電器驅動器推出新款小型雙通道MOSFET IC (2018.02.08)
東芝電子元件及儲存裝置株式會社推出小型雙通道MOSFET SSM6N357R，此款新產品在漏極(Drain)和閘極端子(Gate terminals)之間有內建二極體(Diode)。此IC適用於驅動機械繼電器(Mechanical rela…
Toshiba Electronic Devices & Storage Corporation announced the launch of “SSM6N357R,” a new MOSFET with a built-in diode…
Alliance Memory Launches New 256Mb High-Speed CMOS SDRAMs in the 54-Pin TSOP II Package (2018.01.18)
Alliance Memory extended its offering of 256Mb high-speed CMOS SDRAMs with new x8 and x4 devices in the 54-pin 400-mil p…
Alliance Memory Expands Its Lineup of Low-Power SRAMs With New 64Mb Device in TSOP-I Package (2017.11.09)
To meet the demand for low-power SRAMs with higher densities, Alliance Memory today introduced a new 64Mb (4M x 16 bit) …
Alliance Memory introduced two new 512Mb synchronous DRAMs (SDRAM) in the 54-pin TSOP II package. The AS4C32M16SB-7TCN a…
Toshiba Corporation’s Storage & Electronic Devices Solutions Company announced the addition of new products that utilize…
Miniature Minimold Through-Hole IR Receivers (2016.08.19)
Vishay Intertechnology broadened its optoelectronics portfolio with the introduction of two new series of miniature infr…
Alliance Memory today extended its offering of 256M high-speed CMOS synchronous DRAMs (SDRAM) with two new x32 devices i…
富士通開發全新FRAM具有4 Mbit記憶容量 (2016.03.01)
香港商富士通亞太電子有限公司台灣分公司宣布，富士通成功開發具有4 Mbit記憶容量的全新FRAM（鐵電隨機存取記憶體）產品─MB85RQ4ML，此產品是以高速運算改善網路裝置效能的非揮發性記憶體，於四線SPI介面非揮發性RAM市場中擁有高密…
The Optoelectronics group of Vishay Intertechnology today introduced a new high-accuracy digital ambient light sensor fo…
瑞薩推出16 Mb與32 Mb進階低功率SRAM (2015.10.30)
瑞薩電子（Renesas）推出兩款全新系列的進階低功率SRAM (Advanced LP SRAM)，為目前最主要的低功耗SRAM類型，其設計可提供更高的可靠性及更長的備份電池使用壽命，適用於工廠自動化(FA)、工業設備及智慧電網等應用。新…
16- and 32-Megabit Advanced Low Power SRAMs (2015.07.22)
Renesas Electronics Corporation announced the release of two new series of Advanced Low Power SRAM (Advanced LP SRAM), t…
英飛凌3D磁感測器具備高精確度與低耗電量 (2015.05.22)
【德國慕尼黑訊】英飛凌科技（Infineon）推出 3D 磁感測器 TLV493D-A1B6，採用小型6針腳TSOP封裝，不僅具備高度準確的三維感測功能，且耗電量極低。本款感測器可於 x、y 和 z 方向提供磁場偵測，可確實測量三維、線性和…
凌力爾特4GHz放大器可於寬溫度範圍達到<1pA輸入偏置電流 (2015.05.14)
凌力爾特（Linear）日前針對高動態範圍及高速跨阻放大器（TIA）應用發表單組LTC6268-10及雙組 LTC6269-10 4GHz FET-input運算放大器。新型去補償放大器擴展超低偏置電流運算放大器系列的速度及動態範圍能力，以…
Alliance Memory introduced new high-speed CMOS double data rate synchronous DRAMs (DDR SDRAM) with densities of 256 Mb (…
安森美半導體推出精密運算放大器新系列 (2014.12.22)
新的零漂移、低電壓裝置適合必須於在寬工作溫度範圍提供工業、消費、無線、物聯網及汽車領域的精密應用 推動高能效創新的安森美半導體（ON Semiconductor）推出一系列價格合理的精密CMOS運算放大器，這些器件提供零漂移工作和靜態電流，…
Linear Technology announces the LTC6268 and LTC6269, FET-input single and dual op amps, which deliver outstanding perfor…
36nm SLC NAND Flash with Floating-Gate Technology (2014.05.29)
Macronix announced it has started production of its second generation of Single-Level Cell (SLC) NAND Flash, utilizing 3…