Featuring very low on-state resistance (RDS(on)) to significantly cut conduction losses, the new power MOSFETs are available as 20V and 30V devices in N-and P-Channel configurations.

Designed with a maximum gate drive from 12Vgs, these devices are ideal for battery protection circuits with two cells in series. The IRL6297SD offers two 20V N-Channel MOSFETs in a common drain configuration packaged in a compact, thermally efficient DirectFET Small Can package.

“IR’s broad portfolio of MOSFETs for battery management is available in industry standard packages as well as the dual Small Can DirectFET for compact designs. As a result of the low Rds(on) of this platform, these devices can be used to replace MOSFETs in larger packages to save both board space and reduce system cost,” said Stéphane Ernoux, Director, IR’s Power Management Devices Business Unit.