With an optimized chip design, the π-MOS IX series provides 5dB lower peak EMI noise than the current π-MOS VII series, while maintaining the same level of efficiency. It offers greater design freedom and therefore helps reduce design workloads. In addition, the π-MOS IX series has the same rated avalanche current and rated DC current, making it simple to replace existing MOSFET.

Toshiba Electronic Devices & Storage Corporation will expand the π-MOS IX series with the addition of more 600V devices, plus 500V and 650V devices.