The new all-SiC 62mm half-bridge module’s game-changing switching efficiency and performance allow designers to reduce the amount of magnetic and cooling elements, delivering double the power density and a lower system cost while also reducing end user cost of ownership. Offering a simplified two-level topology that is feasible at higher frequencies, the new module can also eliminate the need to invest in multi-level silicon-based solutions.

The latest Cree SiC power module is available with multiple gate driver options and is pin compatible to standard 62mm half-bridge modules, including IGBT modules rated at 450A or more. This allows designers to quickly and easily evaluate the module’s unparalleled capabilities.

“The new 62mm half-bridge power module is yet another example of Cree’s commitment to the commercialization of SiC-based power electronics,” said Cengiz Balkas, general manager and vice president, Cree Power and RF.

“Utilizing our success in large-area SiC power devices, we have extended the benefits of SiC power modules to the 100kW to 1MW power range for applications such as induction heating, central solar inverters and active front-end motor drives. These new power modules are introduced at a breakthrough price-performance point that unlocks immediate cost savings in these applications.”

Features:

－ Ultra-low loss

－ High-efficiency operation

－ Zero reverse-recovery current from diode

－ Zero turn-off tail current from MOSFET

－ Normally-off, fail-safe device operation

－ Ease of paralleling

－ Copper baseplate and aluminum-nitride insulator