The new H series 1200V IGBTs have up to 15% lower turn-off losses and up to 30% lower turn-on losses. The saturation voltage (Vce(sat)) down to 2.1V (typical, at nominal collector current and 100°C) ensures minimal overall losses for higher-efficiency operation at switching frequencies above 20kHz.

In addition, these new 1200V IGBTs offer the option of an integrated very fast-recovery anti-parallel diode for optimum performance in hard-switching circuits and minimizing energy losses in circuits with a freewheel diode.

The new IGBTs are also extremely rugged, with latch-up-free operation at up to four times the nominal current, and minimum short-circuit time of 5µs (at 150°C starting junction temperature). The extended maximum operating junction temperature of 175°C helps enhance service lifetime and simplify system cooling. A wide Safe Operating Area (SOA) boosts reliability in applications where high power dissipation is required.

Further advantages of the new devices include excellent EMI (electromagnetic interference) characteristics thanks to a near ideal waveform during switching events, which competing high-frequency devices cannot achieve. A positive temperature coefficient of Vce(sat), with close distribution of parameters from device to device, allows safer parallel operation in high-power applications.

ST’s H-series IGBTs are in mass production now, in 15A, 25A, and 40A versions, priced from $2.18 in TO-247 package for orders of 1,000 units.

Features:

－ Low VCE(SAT) for reduced conduction losses

－ Improved switch-off energy spread versus increasing temperature resulting in reduced switching losses

－ Tight parameter distribution for design simplification and easy paralleling

－ Co-packaged tailored anti-parallel diode option for improved power dissipation and best thermal management