The SST12CP21 delivers high linear output power of up to 23 dBm at 1.75% dynamic EVM, with MCS9 HT40 MHz bandwidth modulation at 5V and 320 mA current consumption. Additionally, the SST12CP21 delivers 25 dBm linear power at 3% EVM with only 350 mA current consumption for 802.11g/n applications.

This performance significantly extends the range of 802.11b/g/n WLAN and MIMO systems, while consuming extremely low current at the maximum 256-QAM data rate. The SST12CP21 is also spectrum mask compliant up to 28 dBm for 802.11b/g communication. Board space is reduced by the small 3x3x0.55 mm, 16-pin QFN package that matches a popular pin-out.

Achieving the maximum data rate and longest range while minimizing current consumption is essential to Wi-Fi MIMO access-point, router and set-top-box system designers.

The SST12CP21 power amplifier has a low operating current of 320 mA at 23 dBm and 350 mA at 25 dBm, which enables multichannel and higher data rate WLAN systems. This amplifier also features 50 ohm on-chip input match and simple output match, which is easy to use and reduces board size. Additionally, the integrated linear power detector provides accurate output power control over temperature and 2-to-1 output mismatch.

“Microchip’s RF power amplifiers have a strong position in the WLAN market, due to their reliability combined with high-power efficiencies that can only be achieved using InGaP/GaAs HBT,” said Daniel Chow, vice president of Microchip’s RF Division.

“The SST12CP21 provides the same reliable operation over temperature, at an even lower EVM. In conjunction with its higher-efficiency operation of only 320mA at 23 dBm at 1.75% EVM, and 350 mA at 25 dBm at 3% EVM, this new power amplifier extends the range of both 802.11n and ultra-high data rate, 256-QAM MIMO systems.”