Technology Front
Industry’s First 1.7-kV, All-SiC Power Module
Published: Oct 08,20141887 Read
Cree, Inc. releases the industry’s first all-SiC, 1.7-kV power module in an industry-standard 62-mm housing. Powered by Cree’s C2M large-area SiC chip technology, the new half-bridge module exhibits an impressive 8-mΩ on-resistance and 10-times higher switching efficiency than existing silicon (Si) module technology, capable of replacing Si IGBT modules rated at 400 A or more.
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The performance of the new 1.7-kV all-SiC power module allows design engineers to simultaneously reduce the size and cost of magnetic and cooling elements while achieving superior system efficiency and reliability. Unlike existing silicon-based systems in motor-drive, grid-tie and utility-scale-solar-inverter applications, the new Cree power module also enables lower production costs and the development of smaller, lighter products with a lower overall total cost of ownership.
“The introduction of Cree’s all-SiC, 1700-V power module opens the door for SiC devices to become the switching device of choice for high-power motor drives,” said Devin Dilley, director of medium voltage R&D for Vacon, a global supplier in the premium AC drives market.
“The application of these modules in SiC-based motor drives will enable a reduction in the size and cost of filter components by up to 40 percent while simultaneously increasing system efficiency.”
The superior switching efficiency and voltage capability of this new module enables simplified, two-level topologies that are feasible at higher frequencies, eliminating the need to invest in complex, multi-level silicon-based solutions.
The high power density that can be achieved with Cree’s newest half-bridge module further simplifies the implementation of modular system designs and enables extremely low mean time to repair for high overall system availability.
“Our latest module solidifies Cree’s commitment to support the needs of our customers and the industry demand for lower system cost,” said Cengiz Balkas, general manager and vice president, Cree Power and RF.
“By utilizing our state-of-the-art SiC technology, Cree’s power-module portfolio enables higher efficiency, improved reliability and lower total cost of ownership.”
Features:
－ Ultra-low loss
－ High-frequency operation
－ Zero reverse-recovery current from diode
－ Zero turn-off tail current from MOSFET
－ Normally-off, fail-safe device operation
－ Ease of paralleling
－ Copper baseplate and aluminum-nitride insulator
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