With minimal die shrinks, the single-die 8-Gb DDR3L SDRAM released today provides a reliable drop-in, pin-for-pin-compatible replacement for a number of similar solutions used in conjunction with newer-generation microprocessors for industrial, medical, networking, telecom, and aerospace applications — eliminating the need for costly redesigns and part requalification. This 8-Gb DDR3 is a logical choice for customers that require increased memory yet face board space constraints.

The AS4C512M16D3L operates from a single +1.35-V power supply and is available with a commercial temperature range of 0 °C to +95 °C (AS4C512M16D3L-12BCN) and an industrial temperature range of -40 °C to +95 °C (AS4C512M16D3L-12BIN). The device is internally configured as eight banks of 512M x 16 bits.

The DDR3L SDRAM offers fully synchronous operation and provides programmable read or write burst lengths of 4 or 8. An auto precharge function provides a self-timed row precharge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, and a programmable mode register allows the system to choose the most suitable modes to maximize performance.

Samples of the new AS4C512M16D3L are available now, with lead times of six to eight weeks for production quantities.