“The new IR7xxxS series of 700 V HVICs offers the simplest, smallest and lowest cost solution to drive MOSFETs or IGBTs up to a blocking voltage of 700 V, delivering up to 30 percent reduction in part count and up to 50 percent of board space compared to discrete optocoupler or transformer-based solutions. Moreover, the devices deliver higher breakdown voltage and rugged transient performance for increased reliability,” said Ahmed Masood, Executive Director of High-Voltage ICs at Infineon’s Industrial Power Control Division.

The new IR7xxxS series of HVICs feature sink/source ratings from 60 mA to2,300 mA and utilize PN junction technology. Available in half bridge and high- and low-side configurations, the new HVICs are optimized for 700 V MOSFETs and 650 V IGBTs and offer full driver capability with extremely fast switching speeds to reduce magnetics component count.

Other key features of the new devices include under-voltage lock-out protection for both channels, lower di/dt gate driver for better noise immunity. In addition, the HVICs are tolerant to negative transient voltage dv/dt, offer matched propagation delay for both channels and are 3.3 V and 15 V input logic compatible.