The recent demands for highly secure and reliable user systems are driving increased demand for highly reliable SRAM, which is used to store important information such as system programs and financial transaction data. The prevention of soft errors caused by alpha rays and cosmic neutron rays is a significant issue. Typical measures to deal with this problem include embedding an error correcting code (ECC) circuit in the SRAM or user system to correct any soft errors that occur. There are limits, however, to the error correction capabilities of ECC circuits. For example, some cannot correct simultaneous errors affecting multiple bits.

Renesas' Advanced LP SRAM devices feature exclusive technology in their memory cells that achieves soft error resistance over 500 times that of conventional Full CMOS memory cells. This makes it desirable for use in fields requiring high reliability, including FA, measurement devices, smart grid-related devices, and industrial equipment, in addition to many other fields, such as consumer devices, office equipment, and communication devices.

Features:

－ Renesas' exclusive Advanced LP SRAM technology for dramatically better soft error resistance and enhanced reliability

－ Reduction of standby current to less than half the earlier level for longer backup battery service life

－ The 16 Mb RMLV1616A Series is available in three packages: 48-ball FBGA, 48-pin TSOP (I), and 52-pin µTSOP (II), allowing customers to select the package that best matches their application. The 32 Mb RMWV3216A Series is available in a 48-ball FBGA package.