The UCC27714 delivers 90 nanosecond (ns) propagation delay, 40 percent lower than existing silicon solutions, tight control of the propagation delay with a maximum of 125 ns across -40 C to 125 C and tight channel-to-channel delay matching of 20 ns across -40 C to 125 C. The device eliminates the need for bulky gate drive transformers, saving significant board space in high-frequency switch-mode power electronics.

Features:

－ Smaller footprint creates highest power-density solutions: The UCC27714 reduces gate driver component footprint by 50 percent in secondary-side controlled power supplies.

－ Advanced noise toleration: Negative voltage handling of -6 V at the switched-node pin creates the ability to tolerate noise, causing virtually no malfunctions in the electronic system.

－ MOSFETs have the ability to drive over a wide power range: The device's high-current capability of 4 A enables MOSFETs to drive over a wide power range, from a few watts to a kilowatt.

－ Operates across wide temperatures: All electrical characterizations have little variations across operating temperatures, creating a simplified design and speeding time to market.