Today's air conditioners must meet high efficiency and switching noise reduction standards. The RJP65T54DPM-E0 is an expansion of Renesas' 7th generation insulated gate bipolar transistor (IGBT) that realizes power efficiency with industry-leading low saturation voltage (Vce (sat)) of 1.35 V and low switching noise.

The RJP65T54DPM-E0 is based on Renesas' 7th generation IGBT technology and utilizes the company's thin-wafer technology. The RJP65T54DPM-E0 is optimized for the requirements of air conditioner PFC circuits, with the industry-leading low Vce (sat) of 1.35 V, which translates to the lowest level of conduction losses for the PFC circuit.

The RJP65T54DPM-E0 has minimal switching noise, which reduces electromagnetic interference (EMI) and can simplify EMI filtering.

The use of an isolated-type full molded package eliminates the need for an insulation sheet between the device and the heat sink. In addition, the RJP65T54DPM-E0 is rated up to Tj=175°C which improves the operating temperature range.

In addition to the new IGBT device, Renesas has three existing IGBT devices in production utilizing 7th generation technology which are suitable for full switching PFC circuits. (The RJP65T43DPM-00, the RJH65T46DPQ-A0, and the RJH65T47DPQ-A0).