The release of pMTJ-based ST-MRAM products will enable Everspin to provide solutions for the multi-billion dollar market requiring persistent memory. Storage and server OEMs have already been evaluating Everspin’s ST-MRAM products and are planning to utilize these higher density devices. Everspin will continue to scale to lower geometries, and in turn, higher densities beyond 1Gb in the years to come.

Everspin continues to lead in the development and production of ST-MRAM, the next generation non-volatile memory that will change the landscape of storage and server applications. These applications can now protect “hot data” in MRAM as the first tier of storage.

MRAM instantly secures data in flight without the concern of data corruption due to the unreliability of power sources, as well as the slower write performance of NAND and other persistent memories. Everspin has demonstrated the ability to bring the most disruptive non-volatile memory solutions to the market, which enables the highest performance SCM.

“We continue to bring the fastest non-volatile products to our customers, expanding our offering with a high density 1Gb DDR4 pMTJ ST-MRAM. This will provide new and innovative approaches to the way non-volatile memory solutions can be architected,” said Everspin CEO Phill LoPresti.

Everspin’s 256Mb ST-MRAM with a DDR3 compatible interface is the first ST-MRAM produced utilizing the 300mm manufacturing MRAM line from partner GLOBALFOUNDRIES. Initial samples will be based on an in-plane MTJ technology and will soon transition to pMTJ ST-MRAM technology for volume production.

Everspin is the only company to offer a migration path to a high density ST-MRAM that can meet the specifications required by enterprise customers. Everspin will offer both discrete ST-MRAM products and NVDIMMs for ease of adoption and system compatibility.

ST-MRAM based NVDIMMs provide improved reliability by eliminating the data transfer between DRAM and NAND flash required during a power down situation. The area typically occupied by an external power pack or additional capacitors can now be made available for increased storage capacity.