Technology Front
1.2-mm2 FemtoFET 60-V N-channel power MOSFET
Published: Jun 20,2016125 Read
Texas Instruments (TI) introduced a new 60-V N-channel FemtoFET power transistor that provides the industry's lowest resistance that is 90 percent below traditional 60-V load switches, reducing power loss in end-systems.
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The CSD18541F5 is offered in a tiny 1.53-mm-by-0.77-mm silicon-based package that has an 80 percent smaller footprint than load switches in SOT-23 packages.
The CSD18541F5 metal-oxide semiconductor field-effect transistor (MOSFET) maintains a typical on-resistance (Rdson) of 54-mΩ and is designed and optimized to replace standard small-signal MOSFETs in space-constrained industrial load-switch applications. The tiny land grid array (LGA) package features a 0.5-mm pitch between pads for easy mounting.
The CSD18541F5 expands TI's NexFET technology portfolio of FemtoFET MOSFETs to include higher voltages and manufacturing-friendly footprints.
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