Joining the STPOWER portfolio, the new HB2 series has outstanding conduction performance thanks to low VCEsat of 1.55V. At the same time, dynamic behavior is enhanced due to reduced gate charge that enables fast switching at low gate current. Outstanding thermal performance helps maximize reliability and power density, while the new products are also positioned as a very competitive choice in the market.

The HB2 series IGBTs can be specified with either a full-rated or half-rated diode, or a protection diode to prevent accidental reverse bias, giving extra freedom to optimize the behavior for specific application needs.