The technology represents the fourth consecutive generation where the two companies have worked together on advanced process and CoWoS 3D stacking technology, and will become TSMC's fourth generation of FinFET technology. The collaboration will provide Xilinx a multi-node scaling advantage and build on its outstanding product, execution, and market success at 28nm, 20nm, and 16nm nodes.

"TSMC has been the foundation of our success at 28nm, 20nm, and 16nm, what we call our 3Peat," said Moshe Gavrielov, President and CEO of Xilinx. "Their outstanding process technology, 3D stacking technology, and foundry services have enabled Xilinx to build an unparalleled reputation for product excellence, quality, execution, and market leadership. They have also helped Xilinx transform its product portfolio with a new generation of SoCs, MPSoCs and 3D ICs, complementing its world class FPGAs. We believe TSMC's 7nm technology will be even more transformative for Xilinx."

"TSMC is pleased to work with Xilinx to enable its fourth generation of breakthrough products," said Mark Liu, President and Co-CEO of TSMC. "Our collaboration will bring about a new generation of scaling and 3D integration advantages, built on a proven track record of collaboration and execution by both companies."

Xilinx plans to introduce new 7nm products in 2017.