Cree affordable GaN HEMTs Based on Cree’s proven 40V, 0.25 µm gate length high frequency process, Cree GaN DFN transistors deliver twice the PSAT efficiency and transistor gain of GaAs IMFETs in a package size that is nearly 20 times smaller at comparable power levels and frequencies.

In high capacity microwave data links used in enterprise, point-to-point and airborne communication networks, the new transistors extend the communication range while delivering twice the linear efficiency of GaAs-based amplifiers. This higher efficiency gives RF designers the flexibility needed to reduce amplifier size and weight, creating tremendous savings in operating and total lifecycle costs.

The new DFN devices also make excellent drivers for Cree’s popular CGHV96100 and CGHV96050F2 fully-matched FETs for X-Band, enabling the output and drive stage transistors to operate from the same voltage rail. This allows convenient, regulated power distribution to economize board space compared with a mixed voltage transistor line up.