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eMemory’s NeoFuse Qualified on Winbond 25nm DRAM Process

Published: Jun 25,2019

HSINCHU, Taiwan – eMemory today announced that NeoFuse, its one-time programmable (OTP) non-volatile memory IP, has been qualified on Winbond 25nm DRAM process technology and ready for production.

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eMemory’s NeoFuse is compatible with existing DRAM process and can be used for DRAM repair in both chip probing (CP) tests and final tests to achieve multi-time repairs, thus reducing the cost of laser trimming and repair setup time and facilitating manufacturing flow. The post-packaging chip repair capability also significantly improves yield and benefits for multi-chip packaging (MCP) products.

NeoFuse technology provides a wide range of VDD and VDDIO operations to make product design more flexible and save power. NeoFuse’s high programming yield—it requires only a single-shot-programming pulse—greatly reduces the complexity of operations and testing costs.

“eMemory’s eNVM solutions have been widely embedded in billions of chips for a variety of applications,” said Michael Ho, VP of Business Development at eMemory. “We are pleased to collaborate with Winbond, a leading global supplier of semiconductor memory solutions, to extend our NeoFuse technology on its 25nm DRAM process to enhance testing flexibility and efficiently offer DRAM products targeting a top-tier clientele and quality-oriented applications.”

The announcement is a crucial milestone for eMemory’s collaboration with Winbond. eMemory and Winbond are also working on the implementation of an NVM solution for next-generation DRAM processes, to be released in the near future

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