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Intel and Microsoft Announce “Project EVO” to Further Push the Boundaries of PC
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Published: Dec 09,2016
RDA's 4G RF Power Amplifier Module RPM6741-21 Receives Certification from Qualcomm
RDA Microelectronics (RDA) today announced that its 4G RF power amplifier module RPM6741-21 had received certification from Qualcomm as well as the certification's highest Gold Level recommendation. RDA is the sole local Phase-II PA provider receiving the recommendation...
MIC Points out Ten Important Technology Trends of 2017
TAIPEI, Taiwan - Market Intelligence & Consulting Institute (MIC), a Taiwanese IT industry research and consulting firm, indicated ten technology trends of 2017, including “Vertical integration”, “New development process”, “ArtificiaI Intelligence”, “Blockchain”, “AR/VR”, “360-degree video”, “Commercial drone”, “Bot economy”, “Platform economy” and “Internet celebrity economy”...
VR Industry Leaders Come Together to Create New Association, GVRA
Acer Starbreeze, Google, HTC VIVE, Facebook's Oculus, Samsung, and Sony Interactive Entertainment, today announced the creation of a non-profit organization of international headset manufacturers to promote the growth of the global virtual reality (VR) industry...
Bluetooth SIG Officially Launches Bluetooth 5 Specification
The Bluetooth Special Interest Group (SIG) officially adopted Bluetooth 5 as the latest version of the Bluetooth core specification this week. Key updates to Bluetooth 5 include longer range, faster speed, and larger broadcast message capacity, as well as improved interoperability and coexistence with other wireless technologies...
Keysight to Demonstrate Latest 5G, 802.11ad Design and Test Solutions at IEEE Globecom 2016
Keysight Technologies announced it will demonstrate a wide range of first-to-market design, test and characterization solutions at IEEE Globecom 2016, Washington D.C., Dec. 4 – 7. Keysight’s technical experts will demonstrate the following products, solutions and services: 5G Trial System Modeling and Validation; 28 GHz Wideband Multichannel DPD; Wideband Millimeter-Wave Testbed; 802...
Renesas Announces World’s First Fin-Shaped MONOS Flash Memory Cells for MCUs in 16/14nm
Renesas Electronics Corporation today announced its successful development of the world’s first split-gate metal-oxide nitride oxide silicon (SG-MONOS) flash memory cells employing transistors with fin-shape for use in microcontrollers (MCUs) with on-chip flash memory having a circuit linewidth of 16 to 14 nanometer (nm) or finer...
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