That is because the LTC6432-15’s advanced SiGe bipolar design exhibits significantly lower 1/f noise frequency corner than that of GaAs or pHEMT FET based amplifiers. Hence its noise figure rises to only 6.6dB at 100kHz, compared to more than 20dB for other amplifiers. The LTC6432-15 effectively extends the useful bandwidth and dynamic range performance for many applications that process low frequency signals. Moreover, the LTC6432-15 achieves superior stability over temperature, power supply ranges and from device to device compared to GaAs and pHEMT amplifiers.

The LTC6432-15’s high dynamic range and extended bandwidth to low frequencies broaden its usefulness and improve performance in a wide range of amplifier applications including high sample rate A/D converter drivers, cable network amplifiers, broadband signal source conditioning, radar receiver IF amplifiers, software defined radio, VHF/UHF broadcast radios and RF test instruments.

The LTC6432-15 differential inputs and outputs are internally 100Ω terminated. Its inputs are matched from 100kHz to 1.4GHz, with better than 10dB return loss over the full bandwidth. The output is also matched from 100kHz to 1GHz. The amplifier needs only DC blocking capacitors at its inputs and outputs, two chokes for proper biasing, plus one feedback capacitor per output to extend its excellent gain flatness to low frequencies.

The LTC6432-15 operates from a single 5V supply. It draws a nominal 166mA supply current. The device is specified for operation over a case temperature range from –40°C to 85°C. The LTC6432-15 is available in a 4mm x 4mm plastic QFN package in two grades: a B-grade with all typical parametric performance at $3.69 each in 1,000-piece quantities, and a higher performance A-grade with tested and guaranteed specifications at $6.44 each.