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Modulated Doping Improves GaN-based Vertical-cavity Surface-emitting Lasers (2016.11.14)

Researchers at Meijo University and Nagoya University in Japan demonstrate a design of GaN-based vertical-cavity surface-emitting lasers (VCSELs) that provides good electrical conductivity and is readily grown. The findings are reported in Applied Physics Express...

Xilinx Unveils Details for New 16nm Virtex UltraScale+ FPGAs (2016.11.09)

Xilinx today unveiled details for new 16nm Virtex UltraScale+ FPGAs with HBM and CCIX technology. Containing the highest memory bandwidth available, these HBM-enabled FPGAs offer 20X higher memory bandwidth relative to a DDR4 DIMM and 4X less power per bit versus competing memory technologies...

Toshiba to Expand 3D Flash Memory Production Capacity (2016.11.08)

Toshiba Corporation today announced the outline schedule for the construction of a state-of-the-art fabrication facility at Yokkaichi Operations in Mie, Japan, for expanded production of BiCS FLASH, its proprietary 3D Flash memory...

Panasonic to Start Mass Production of High-speed Gate Driver Dedicated to GaN Power Transistor X-GaN (2016.11.07)

Panasonic Corporation today announced that it will start mass production of a high-speed gate driver (AN34092B) optimized for driving its GaN power transistor X-GaN in November 2016. The company will also start mass production of two types of X-GaN (PGA26E07BA and PGA26E19BA) and provide solutions in combination with high-speed gate drivers...

Samsung Expands Its Advanced Foundry Offerings with 14LPU and 10LPU Processes (2016.11.06)

Samsung Electronics announced that it is expanding its advanced foundry process technology offerings with the fourth-generation 14-nanometer (nm) process (14LPU) and the third-generation 10nm process (10LPU) to meet the requirements of next generation products ranging from mobile and consumer electronics to data centers and automotives...

Precision Voltage Reference Drives Up to 200mA, Achieves 0.1ppm/mA Load Regulation & 10ppm/°C Drift (2016.11.04)

Linear Technology announces the LT6658, a precision voltage reference that incorporates two high current output buffers. Based on a 2.5V bandgap voltage reference, each output can be separately configured for any voltage between 2...

TI's New Unified Memory 16-bit Microcontrollers (2016.11.04)

Texas Instruments (TI) expanded its ultra-low-power MSP430 FRAM microcontroller (MCU) portfolio with two new low-power families targeting a wide range of sensing and measurement applications. The new MCUs extend the portfolio from 2KB to 256KB of integrated ferroelectric random access memory (FRAM) technology, which is a non-volatile memory technology that offers unmatched flexibility and ultra-low power performance...

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