The 16FinFET process has twice the gate density of TSMC's 28HPM process, and operates more than 40 percent faster at the same total power, or reduces total power over 60 percent at the same speed.

TSMC emphasized on innovation, especially the product or technology that is high effiency with low power consumption. The collaboration with HiSilicon can be seen as a milestone for both parties.

TSMC's 16FinFET process ensures impressive speed and power improvements, as well as to reduce leakage. All of these advantages overcome challenges that have become critical barriers to further scaling of advanced SoC technology.

It has twice the gate density of TSMC's 28HPM process, and operates more than 40 percent faster at the same total power, or reduces total power over 60 percent at the same speed.

“Our FinFET R&D goes back over a decade and we are pleased to see the tremendous efforts resulted in this achievement,” said TSMC President and Co-CEO, Dr. Mark Liu. “We are confident in our abilities to maximize the technology's capabilities and bring results that match our long track record of foundry leadership in advanced technology nodes.”

TSMC's 16FinFET has entered risk production with excellent yields after completing all reliability qualifications in November 2013. This paves the way for TSMC and customers to engage in more future product tape-outs, pilot activities and early sampling.

Seperately, according to an earlier report, TSMC and Samsung split orders for iPhone 6 processors.

Andrew Rassweiler, an IHS Analyst who supervised the teardown of the new iPhones, said TSMC is manufacturing about 60 percent of the A8 chips for Apple, and Samsung is supplying about 40 percent.