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IBM, GLOBALFOUNDRIES and Samsung Co-produce Industry’s First 7nm Test Chips

Published: Jul 10,2015

A close look of industry’s First 7nm Test Chips

An alliance led by IBM Research announced that it has produced the semiconductor industry’s first 7nm (nanometer) node test chips with functioning transistors. The breakthrough, accomplished in partnership with GLOBALFOUNDRIES and Samsung at SUNY Polytechnic Institute’s Colleges of Nanoscale Science and Engineering (SUNY Poly CNSE), could result in the ability to place more than 20 billion tiny transistors on the fingernail-sized chips that power everything from smartphones to spacecraft.

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To achieve the higher performance, lower power and scaling benefits promised by 7nm technology, researchers had to bypass conventional semiconductor manufacturing approaches, most notably Silicon Germanium (SiGe) channel transistors and Extreme Ultraviolet (EUV) lithography integration at multiple levels.

Industry experts consider 7nm technology crucial to meeting the anticipated demands of future cloud computing and Big Data systems, cognitive computing, mobile products and other emerging technologies. Part of IBM’s $3 billion, five-year investment in chip R&D (announced in 2014), this accomplishment was made possible through a unique public-private partnership with New York State and joint development alliance with GLOBALFOUNDRIES, Samsung, and equipment suppliers. The team is based at SUNY Poly’s NanoTech Complex in Albany.

“For business and society to get the most out of tomorrow’s computers and devices, scaling to 7nm and beyond is essential,” said Arvind Krishna, senior vice president and director of IBM Research. “That’s why IBM has remained committed to an aggressive basic research agenda that continually pushes the limits of semiconductor technology. Working with our partners, this milestone builds on decades of research that has set the pace for the microelectronics industry, and positions us to advance our leadership for years to come.”

The alliance introduced SiGe channel material for transistor performance enhancement at 7nm node geometries, process innovations to stack them below 30nm pitch and full integration of EUV lithography at multiple levels. These techniques and scaling could result in at least a 50 percent power/performance improvement for next generation mainframe and POWER systems that will power the Big Data, cloud and mobile era.

“Governor Andrew Cuomo’s trailblazing public-private partnership model is catalyzing historic innovation and advancement. Today’s announcement is just one example of our collaboration with IBM, which furthers New York State’s global leadership in developing next generation technologies,” said Dr. Michael Liehr, SUNY Poly Executive Vice President of Innovation and Technology and Vice President of Research. “Enabling the first 7nm node transistors is a significant milestone for the entire semiconductor industry as we continue to push beyond the limitations of our current capabilities.”

"Today’s announcement marks the latest achievement in our long history of collaboration to accelerate development of next-generation technology," said Gary Patton, CTO and Head of Worldwide R&D at GLOBALFOUNDRIES. "Through this joint collaborative program based at the Albany NanoTech Complex, we are able to maintain our focus on technology leadership for our clients and partners by helping to address the development challenges central to producing a smaller, faster, more cost efficient generation of semiconductors."

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