With a power efficiency rating of above 40%, the amplifier is expected to contribute to large-capacity communication and reduce the power consumption of mobile base stations.

Mitsubishi Electric’s novel ultra-wideband digitally controlled GaN amplifier uses an advanced load modulation circuit with two parallel GaN transistors. The circuit expands the bandwidth of load modulation, a key factor for the amplifier’s high-efficiency operation, for wideband (1.4–4.8GHz) operation. Wide-band operation of amplifier supports several frequency bands.

Digitally controlled input signals for amplifier realize high-efficiency load modulation of above 40% over 110% of the fractional bandwidth. Digital control employs learning function based on Maisart.