The new NTMFS4Hxxx and NTTFS4Hxxx series of MOSFETs are ideally suited as switching devices for a wide range of applications including server and networking equipment and high power density DC-DC converters, or to support synchronous rectification in point-of-load (PoL) modules. Versions of these MOSFETS are available with or without an integrated Schottky diode that can help engineers achieve even greater efficiency.

ON Semiconductor recognizes the ever-increasing focus on the energy efficiency of end product performance, and has optimized the design, materials and packaging of the new power MOSFETs to reduce losses. Best-in-class RDSon performance of 0.7 milliohms (mΩ) and low input capacitance of 3780 picofarads (pF) ensure conduction, switching and driver losses are minimized. Careful consideration has also been given to ensure that the MOSFETs offer improved thermal performance and low package resistance and inductance compared to existing devices.

“Optimal overall efficiency derived from minimizing losses incurred through conduction and switching is very high on the wish list for designers across an increasing number of end markets,” said Paul Leonard, vice president and general manager for ON Semiconductor’s Power Discrete products.

“By utilizing our process, materials and packaging expertise we have been able to advance the performance of power MOSFETs to a new level that will help our customers achieve their stringent design performance objectives.”