The new chipscale MICRO FOOT p-channel Si8457DB provides the industry's lowest on-resistance at a 1.8 V gate drive for any MOSFET with a 1.6 mm by 1.6 mm footprint and is the only such device with a VGS = ± 8 V rating, which provides an extra margin of safety in lithium ion battery-powered applications.

Designed to be used as a battery switch and load switch in power management applications, the Si8457DB features on-resistance of 19 mΩ at -4.5 V, 23.4 mΩ at -2.5 V, and 35 mΩ at -1.8 V. Compared with the next best devices in the DFN 1.6 mm square package, the rating at -1.8 V represents an improvement of 17 %.

The device's low on-resistance, ratings down to -1.8 V, and ± 8 V VGS provide a combination of safety margin, gate drive design flexibility, and high performance for most lithium ion battery-powered applications.

The Si8457DB achieves its industry-first capabilities thanks to its extremely low on-resistance per area, which enables space savings while also helping to lower battery power consumption for mobile applications. The device's low on-resistance means a very low voltage drop at DC and pulse peak currents, so less power is wasted as heat.

The device's on-resistance rating at -1.8 V simplifies the task of meeting design requirements such as accommodating low battery conditions or when the IC load brings down the gate-to-source voltage.

The Si8457DB is a crucial building block in an efficient load switch for mobile power management. As a p-channel MOSFET it has the distinct advantage of being able to switch on with no requirement for a charge pump in the circuit design, and it can work directly with numerous power management and controller ICs from various suppliers.