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Propelled by 51% Share of IDM Sales and 65% Share of Fabless Sales, U.S. Companies Captured 55% (2020.03.22)

Regional marketshares of IDMs (companies operating wafer fabs), fabless companies, and total IC sales were led by U.S. headquartered companies in 2019, according to data presented in the recently released March Update to The McClean Report 2020...

Propelled by 51% Share of IDM Sales and 65% Share of Fabless Sales, U.S. Companies Captured 55% (2020.03.22)

Regional marketshares of IDMs (companies operating wafer fabs), fabless companies, and total IC sales were led by U.S. headquartered companies in 2019, according to data presented in the recently released March Update to The McClean Report 2020...

TSMC and NCTU Work on Wafer-scale One-atom-thick Insulating Layer Technology (2020.03.17)

TAIPEI, Taiwan - Under long-term support from the “Taiwan Consortium of Emergent Crystalline Materials” (TCECM) program of the Ministry of Science and Technology (MOST), Taiwan, a research team at National Chiao Tung University (NCTU) collaborated with Taiwan Semiconductor Manufacturing Company (TSMC) to form an industry-university joint research team, reporting a breakthrough in the synthesis of one-atom-thick boron nitride (BN)...

TSMC and NCTU Work on Wafer-scale One-atom-thick Insulating Layer Technology (2020.03.17)

TAIPEI, Taiwan - Under long-term support from the “Taiwan Consortium of Emergent Crystalline Materials” (TCECM) program of the Ministry of Science and Technology (MOST), Taiwan, a research team at National Chiao Tung University (NCTU) collaborated with Taiwan Semiconductor Manufacturing Company (TSMC) to form an industry-university joint research team, reporting a breakthrough in the synthesis of one-atom-thick boron nitride (BN)...

Imec demonstrates 24nm pitch lines with single exposure EUV lithography on ASML’s NXE:3400B scanner (2020.02.27)

This week, at the SPIE Advanced Lithography Conference, imec and ASML announce a breakthrough in printing narrow 24 nanometer (nm) pitch lines, corresponding to the dimensions of critical back-end-of-line metal layers of a 3 nm technology node process...

Imec demonstrates 24nm pitch lines with single exposure EUV lithography on ASML’s NXE:3400B scanner (2020.02.27)

This week, at the SPIE Advanced Lithography Conference, imec and ASML announce a breakthrough in printing narrow 24 nanometer (nm) pitch lines, corresponding to the dimensions of critical back-end-of-line metal layers of a 3 nm technology node process...

Samsung Electronics Begins Mass Production at New EUV Manufacturing Line (2020.02.20)

Samsung Electronics today announced that its new cutting-edge semiconductor fabrication line in Hwaseong, Korea, has begun mass production. (圖一) The facility, V1, is Samsung’s first semiconductor production line dedicated to the extreme ultraviolet (EUV) lithography technology and produces chips using process node of 7 nanometer (nm) and below...

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