Technology Front
Toshiba Releases Small MOSFET with High ESD Protection to Drive Headlight LED
Published: Mar 26,20181968 Read
Toshiba Electronic Devices & Storage Corporation has released a dual MOSFET “SSM6N813R” with high ESD protection positioned for use in automotive applications, including as a driver IC for headlight LEDs, which require a high withstand voltage and a small footprint. Mass production shipments begin in April.
Toshiba Releases 650V Super Junction Power MOSFETs in TOLL Package
Toshiba has launched 650V super junction power MOSFETs, TK065U65Z, TK090U65Z, TK110U65Z, TK155U65Z and TK190U65Z, in its...
Toshiba Launches 100V High-Current Photorelay for Industrial Equipment
Toshiba has launched "TLP241B," a high-current photorelay in a DIP4 package for industrial equipment such as programmable logic controllers and I/O interfaces...
A maximum drain-source voltage (VDSS) of 100V ensures that SSM6N813R is suitable for headlight applications requiring multiple LEDs—a capability supported by high ESD immunity. Fabricated using the latest process and housed in a TSOP6F package, SSM6N813R has an allowable power dissipation of 1.5W and low on-resistance. In addition, the footprint of the TSOP6F package is 70% smaller than that of an SOP8 package.
Top Stories
Most Popular
Related Products
Address: Rm. A204, No. 287-2, Sec. 3, Chengde Rd., Datong Dist., Taipei City , Taiwan (R.O.C.)
Phone:+886 2 2585-5526
E-Mail:en@ctimes.com.tw