Toshiba Corporation today announced the outline schedule for the construction of a state-of-the-art fabrication facility at Yokkaichi Operations in Mie, Japan, for expanded production of BiCS FLASH, its proprietary 3D Flash memory...

Toshiba Corporation today announced the outline schedule for the construction of a state-of-the-art fabrication facility at Yokkaichi Operations in Mie, Japan, for expanded production of BiCS FLASH, its proprietary 3D Flash memory...

Panasonic Corporation today announced that it will start mass production of a high-speed gate driver (AN34092B) optimized for driving its GaN power transistor X-GaN in November 2016. The company will also start mass production of two types of X-GaN (PGA26E07BA and PGA26E19BA) and provide solutions in combination with high-speed gate drivers...

Panasonic Corporation today announced that it will start mass production of a high-speed gate driver (AN34092B) optimized for driving its GaN power transistor X-GaN in November 2016. The company will also start mass production of two types of X-GaN (PGA26E07BA and PGA26E19BA) and provide solutions in combination with high-speed gate drivers...

Samsung Electronics announced that it is expanding its advanced foundry process technology offerings with the fourth-generation 14-nanometer (nm) process (14LPU) and the third-generation 10nm process (10LPU) to meet the requirements of next generation products ranging from mobile and consumer electronics to data centers and automotives...

Linear Technology announces the LT6658, a precision voltage reference that incorporates two high current output buffers. Based on a 2.5V bandgap voltage reference, each output can be separately configured for any voltage between 2...

Linear Technology announces the LT6658, a precision voltage reference that incorporates two high current output buffers. Based on a 2.5V bandgap voltage reference, each output can be separately configured for any voltage between 2...