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eMemory’s NeoFuse IP Verified in TSMC 10nm FinFET Process (2016.11.16)

HSINCHU, Taiwan – eMemory today announced the successful demonstration of its security-enhanced NeoFuse IP in TSMC’s 10nm FinFET process, along with IP design kits available to customers for product design-in. Security concerns associated with high-level chips heighten the need for security functions in logic NVM IP with leading-edge process nodes...

eMemory’s NeoFuse IP Verified in TSMC 10nm FinFET Process (2016.11.16)

HSINCHU, Taiwan – eMemory today announced the successful demonstration of its security-enhanced NeoFuse IP in TSMC’s 10nm FinFET process, along with IP design kits available to customers for product design-in. Security concerns associated with high-level chips heighten the need for security functions in logic NVM IP with leading-edge process nodes...

TSMC to Publish 7nm FinFET Technology at ISSCC 2017 (2016.11.15)

TAIPEI, Taiwan – The International Solid-State Circuits Conference (ISSCC) 2017 is going to be held on February 5, 2017 to February 9 in San Francisco, United States. And there will be 15 papers to be published from Taiwan, including TSMC’s 7-nanometer Fin Field-Effect Transistor (FinFET) technology which will be the industry’s first to announce at ISSCC 2017...

TSMC to Publish 7nm FinFET Technology at ISSCC 2017 (2016.11.15)

TAIPEI, Taiwan – The International Solid-State Circuits Conference (ISSCC) 2017 is going to be held on February 5, 2017 to February 9 in San Francisco, United States. And there will be 15 papers to be published from Taiwan, including TSMC’s 7-nanometer Fin Field-Effect Transistor (FinFET) technology which will be the industry’s first to announce at ISSCC 2017...

Modulated Doping Improves GaN-based Vertical-cavity Surface-emitting Lasers (2016.11.14)

Researchers at Meijo University and Nagoya University in Japan demonstrate a design of GaN-based vertical-cavity surface-emitting lasers (VCSELs) that provides good electrical conductivity and is readily grown. The findings are reported in Applied Physics Express...

Modulated Doping Improves GaN-based Vertical-cavity Surface-emitting Lasers (2016.11.14)

Researchers at Meijo University and Nagoya University in Japan demonstrate a design of GaN-based vertical-cavity surface-emitting lasers (VCSELs) that provides good electrical conductivity and is readily grown. The findings are reported in Applied Physics Express...

Xilinx Unveils Details for New 16nm Virtex UltraScale+ FPGAs (2016.11.09)

Xilinx today unveiled details for new 16nm Virtex UltraScale+ FPGAs with HBM and CCIX technology. Containing the highest memory bandwidth available, these HBM-enabled FPGAs offer 20X higher memory bandwidth relative to a DDR4 DIMM and 4X less power per bit versus competing memory technologies...

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